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DC magnetic field sensor based on electric driving and magnetic tuning in piezoelectric/magnetostrictive bilayer

机译:基于电驱动和磁调谐的压电/磁致伸缩双层直流磁场传感器

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摘要

A dc magnetic field sensor possessing an interestingly high electric voltage-driven, magnetic field-tuned dc magnetoelectric (ME) effect is developed based on a bilayer of Pb(Zr, Ti)O3 piezoelectric transformer and Tb0.3Dy0.7Fe1.92 magnetostrictive substrate. The dc ME effect in the sensor, as evaluated experimentally and theoretically, is induced by driving the bilayer at its zero-field longitudinal resonance frequency (fr0) using an ac electric voltage (Vac) referenced at the input of the piezoelectric transformer, as well as, by tuning the field-dependent compliance and resonance characteristics of the bilayer with the dc magnetic field to be measured (Hdc) upon the negative-ΔE effect intrinsic in the magnetostrictive substrate. The sensor shows a good linear negative response of ac ME voltage (VME) at the output of the piezoelectric transformer to a broad range of Hdc of 0-350 Oe under a small Vac of 2.5 V peak at the designated fr0 of 125.3 kHz. This gives a high negative dc magnetic field sensitivity (S) of -1.58 mV/Oe.
机译:基于Pb(Zr,Ti)O3压电变压器和Tb0.3Dy0.7Fe1.92磁致伸缩衬底的双层结构,开发了一种具有有趣的高电压驱动,磁场调谐的直流磁电(ME)效果的直流磁场传感器。通过在压电变压器输入端以交流电压(Vac)为参考,通过驱动双层以其零场纵向谐振频率(fr0)来诱发传感器的dc ME效应,这在实验和理论上都得到了评估。例如,通过在磁致伸缩衬底中固有的负ΔE效应下,通过用待测直流磁场(Hdc)调整双层的场相关柔度和共振特性。在指定的fr0为125.3 kHz时,在2.5 V峰值的小Vac下,传感器在压电变压器的输出端对0-350 Oe的Hdc的宽范围内的交流ME电压(VME)表现出良好的线性负响应。这提供了-1.58 mV / Oe的高负直流磁场灵敏度(S)。

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